Diffusion of iron in silicon dioxide
A quantitative analysis of diffusion of iron in silicon dioxide is presented. A source of iron deposited on the surface of thermally oxidized silicon wafers was diffused at temperatures ranging from 700-1100 deg C in an inert (nitrogen) ambient. The iron concentration in SiO sub 2 and Si was measure...
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Published in | Journal of the Electrochemical Society Vol. 146; no. 10; pp. 3773 - 3777 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Pennington, NJ
Electrochemical Society
01.10.1999
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Subjects | |
Online Access | Get full text |
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Summary: | A quantitative analysis of diffusion of iron in silicon dioxide is presented. A source of iron deposited on the surface of thermally oxidized silicon wafers was diffused at temperatures ranging from 700-1100 deg C in an inert (nitrogen) ambient. The iron concentration in SiO sub 2 and Si was measured using total reflection X-ray fluorescence, deep level transient spectroscopy, and surface photo-voltage techniques. A two-boundary diffusion model was applied to the experimental data to determine the diffusivity and segregation coefficient of iron in SiO sub 2 . It is observed that iron diffusivity in SiO sub 2 follows the Arrhenius relationship and has a thermal activation energy of 1.51 eV. Iron exhibits a strong tendency to segregate into silicon dioxide and has a value of k = 1.1 x 10 exp -7 at 1000 deg C, where k = N sub Si /N sub oxide . |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0013-4651 1945-7111 |
DOI: | 10.1149/1.1392548 |