Amorphous-silicon thin-film transistors with silicon dioxide gate grown in nitric-acid gas

A low-temperature thermal-oxidation method of silicon wherein nitric acid in gas phase is used as an oxidizing agent has been developed. Five nanometers-thick oxide was grown within 24 h at temperatures below 350°C. Interface and bulk characteristics were as good as those of high-temperature thermal...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 29; no. 1; pp. 58 - 61
Main Authors ZHANG, H, KANOH, H, YAMAJI, S, SUGIURA, O, MATSUMURA, M
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 1990
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Gases
MOS structure
Transistor
Silicon
Amorphous state
Nitric acid
Thin film
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Summary:A low-temperature thermal-oxidation method of silicon wherein nitric acid in gas phase is used as an oxidizing agent has been developed. Five nanometers-thick oxide was grown within 24 h at temperatures below 350°C. Interface and bulk characteristics were as good as those of high-temperature thermal oxide grown by conventional methods. The new oxide has been applied successfully to the gate insulator of amorphous-silicon thin-film transistors. It was found that the transistor had stabler characteristics than the conventional one with plasma-deposited silicon nitride.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.29.58