Non-amphoteric N-type doping with Sn of GaAs(631) layers grown by molecular beam epitaxy

• Published in: Journal of applied physics Vol. 135; no. 17
• Main Authors: Mora Herrera, M. F., Espinosa-Vega, L. I., Cortes-Mestizo, I. E., Olvera-Enriquez, J. P., Belio-Manzano, A., Cuellar-Camacho, J. L., Gorbatchev, A. Yu, Del Rio-De Santiago, A., Yee-Rendón, C. M., Méndez-García, V. H.
• Format: Journal Article
• Language: English
• Published: 07.05.2024
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/5.0193026

The Sn-doping effects on the electrical conduction and optical properties of GaAs(631)A epilayers grown by molecular beam epitaxy were investigated. We found that the conduction type conversion, frequently observed in the doping of layers grown on high-index substrates, is avoided when tin-doping is implemented. The maximum free-carrier concentration (n) obtained in GaAs(631):Sn was 2 × 1019 cm−3, an order of magnitude higher than previously reported for GaAs(631):Si, and within the same order of magnitude for the growth of GaAs(100):Si. The electron mobility was suitable for many optoelectronic applications. Raman spectroscopy showed low lattice disorder in (631) oriented samples, compared with singular (100) samples. The photoluminescence characterization of the samples revealed the blueshift of the optical transitions close to E0 associated with the Moss–Burstein effect for Sn doping. Photoreflectance spectroscopy was used to study the doping properties at the critical points E1 and E1 + Δ1, where the major affectation with n was perceived in the broadening parameter Γ.