In situ temperature and distribution measurements of x-ray

For high throughput with X-ray lithography, a very sensitive X-ray resist, good X-ray transparency of the mask and high exposure power are required. This leads to a local temperature rise of the X-ray masks due to the absorbed power and, therefore, to mask distortions, resulting in pattern displacem...

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Bibliographic Details
Published inMicroelectronic engineering Vol. 17; no. 1; pp. 193 - 197
Main Authors Trube, J., Bernt, H., Engler, K., Huber, H.L.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.03.1992
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Summary:For high throughput with X-ray lithography, a very sensitive X-ray resist, good X-ray transparency of the mask and high exposure power are required. This leads to a local temperature rise of the X-ray masks due to the absorbed power and, therefore, to mask distortions, resulting in pattern displacement. This paper presents theoretical calculations and experimental results on the temperature rise of X-ray masks as well as the resulting pattern displacement on the wafer.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(92)90040-X