Asymmetric multiple-quantum-well laser diodes with wide and flat gain

Asymmetric multiple-quantum-well laser diodes with wide and flat gain spectra were designed, fabricated, and analyzed. The active layer was composed of three 10-nm, one 8-nm, and two 6-nm 0.5% compressive strained wells and four 10-nm and one 5-nm 0.4% tensile strained barrier layer. Measured spectr...

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Bibliographic Details
Published inOptics letters Vol. 28; no. 22; p. 2189
Main Authors Kwon, Oh-Kee, Kim, Kang-ho, Sim, Eun-Deok, Kim, Jong-Hoi, Kim, Hyun-Soo, Oh, Kwang-Ryong
Format Journal Article
LanguageEnglish
Published United States 15.11.2003
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Summary:Asymmetric multiple-quantum-well laser diodes with wide and flat gain spectra were designed, fabricated, and analyzed. The active layer was composed of three 10-nm, one 8-nm, and two 6-nm 0.5% compressive strained wells and four 10-nm and one 5-nm 0.4% tensile strained barrier layer. Measured spectra of antireflection-coated ridge waveguide laser diodes with such quantum-well structures have shown that -1-dB spectral gain bandwidth can be as large as 90 nm.
ISSN:0146-9592
DOI:10.1364/OL.28.002189