Nonlinear RF Modeling of GaN HEMTs With Fermi Kinetics Transport and the ASM-HEMT Compact Model [Young Professionals]

• Published in: IEEE microwave magazine Vol. 25; no. 1; pp. 78 - 87
• Main Authors: Miller, Nicholas C., Grupen, Matt, Gibiino, Gian Piero, King, Justin
• Format: Magazine Article
• Language: English
• Published: New York IEEE 01.01.2024; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: CAD; Computer aided design; Electronic warfare; Fermi level; Gallium nitride; Gallium nitrides; HEMTs; High electron mobility transistors; Integrated circuits; Kinetic theory; Kinetics; Millimeter waves; Modelling; Nonlinear systems; Physics; Satellite communications; Subsystems
• ISSN: 1527-3342; 1557-9581
• DOI: 10.1109/MMM.2023.3321549

Gallium nitride (GaN) HEMTs are a key technological component in current and next-generation RF and millimeter-wave (mm-wave) integrated circuits and subsystems. Applications where GaN has made considerable impact include radar, communications, satellite communications, and electronic warfare. A critical aspect of the RF design cycle is accurate modeling of the GaN HEMTs. Modeling of the transistors can take two significantly different forms: one referred to as technology computer-aided design (TCAD) and the other called physics-based compact modeling. These subjects were the basis of the "Best Presentation" winning talk at the IEEE Microwave Theory and Technology Design Automation Committee [Technical Committee 2 (TC-2)] Modeling and Optimization Workshop, where the modeling research at the Air Force Research Laboratory (AFRL) was discussed. Namely, AFRL's custom TCAD solver called Fermi kinetics transport (FKT) <xref ref-type="bibr" rid="ref1">[1] and physics-based compact modeling using the Advanced SPICE Model for HEMTs (ASM-HEMT) <xref ref-type="bibr" rid="ref2">[2] were presented. This article provides an overview of the physics-based modeling efforts at AFRL.