The indices of refraction of molecular-beam epitaxy-grown BexZn1-xTe ternary alloys

• Published in: Journal of electronic materials Vol. 32; no. 7; pp. 742 - 746
• Main Authors: PEIRIS, F. C, BUCKLEY, M. R, MAKSIMOV, O, MUNOZ, M, TAMARGO, M. C
• Format: Conference Proceeding Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01.07.2003
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Ii-vi semiconductors; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Inorganic compounds; Semiconductor materials; Dispersion relations; Zinc tellurides; Beryllium tellurides; Ternary compounds; Refractive index; prism coupler; molecular-beam epitaxy (MBE); XRD; index of refraction; Experimental study; reflectivity; BexZn1-xTe; Ellipsometry; Thin films; Reflection spectrum; Molecular beam epitaxy; Chemical composition; Incidence angle

Authors used a combination of prism-coupling, reflectivity, and ellipsometric techniques to investigate the indices of refraction, n, of a series of BexZn1-xTe thin films grown on InP substrates. After determining the concentrations of each of the BexZn1-xTe alloys using XRD measurements, authors me...