The indices of refraction of molecular-beam epitaxy-grown BexZn1-xTe ternary alloys
Authors used a combination of prism-coupling, reflectivity, and ellipsometric techniques to investigate the indices of refraction, n, of a series of BexZn1-xTe thin films grown on InP substrates. After determining the concentrations of each of the BexZn1-xTe alloys using XRD measurements, authors me...
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Published in | Journal of electronic materials Vol. 32; no. 7; pp. 742 - 746 |
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Main Authors | , , , , |
Format | Conference Proceeding Journal Article |
Language | English |
Published |
New York, NY
Institute of Electrical and Electronics Engineers
01.07.2003
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Subjects | |
Online Access | Get full text |
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Summary: | Authors used a combination of prism-coupling, reflectivity, and ellipsometric techniques to investigate the indices of refraction, n, of a series of BexZn1-xTe thin films grown on InP substrates. After determining the concentrations of each of the BexZn1-xTe alloys using XRD measurements, authors measured their n at discrete wavelengths using a prism-coupler setup. In addition, authors used reflectivity measurements to complement the prism-coupler data and arrive at the dispersion relations of n for the BexZn1-xTe alloys below their fundamental energy gaps. Authors then employed a rotating analyzer-spectroscopic ellipsometer to measure the complex reflection ratio for each of the films at angles of incidence of 65, 70, and 75 degrees. By using the n values obtained from both the prism-coupler and the reflection-spectroscopy techniques to guide the ellipsometric analysis, authors were able to obtain accurate results for the dispersion of n for the BexZn1-xTe alloys, not only below their fundamental energy gaps, but also above their energy gaps (up to 6.5 eV) using these three complementary techniques. 16 refs. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-003-0063-9 |