Broadband PureB Ge-on-Si Photodiodes

Broadband PureB Ge-on-Si photodiodes were fabricated by in-situ capping of n-type Ge-islands grown by chemical-vapor deposition on Si with a 10-nm-thick pure boron layer. Using deposition temperatures from 575°C - 700°C, the B-layer forms <inline-formula> <tex-math notation="LaTeX"...

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Bibliographic Details
Published inIEEE electron device letters Vol. 45; no. 6; pp. 1040 - 1043
Main Authors Nanver, Lis K., Hassan, Vinayak V., Attariabad, Asma, Rosson, Nicholas, Arena, Chantal J.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.06.2024
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Broadband
Chemical vapor deposition
Dark current
Germanium
Photodiodes
pure boron
responsivity
Schottky diodes
Semiconductor lasers
Silicon
Substrates
ultrashallow junctions
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Summary:Broadband PureB Ge-on-Si photodiodes were fabricated by in-situ capping of n-type Ge-islands grown by chemical-vapor deposition on Si with a 10-nm-thick pure boron layer. Using deposition temperatures from 575°C - 700°C, the B-layer forms <inline-formula> <tex-math notation="LaTeX">\text{p}^{+} </tex-math></inline-formula>-like anodes with nm-shallow junctions and low dark currents, enabling close to ideal responsivities of 0.13, 0.37, 0.48, and 0.19 A/W at wavelengths 406, 670, 1310 and 1550 nm, respectively.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2024.3391729