Influence of the topology on thermal dissipation in high power density GaAs devices

This paper presents an analysis of the influence of the active zone topology on the heat dissipation for GaAs devices. It highlights the influence of the width and the form factor on the thermal behavior of the device. It also shows the sensitivity of the thermal resistance to the increase of the di...

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Bibliographic Details
Published inSolid-state electronics Vol. 46; no. 11; pp. 1919 - 1924
Main Authors Camps, T, Marty, A, Tasselli, J, Bailbe, J.P, Souverain, P
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.11.2002
Subjects
GaAs devices
High power density
Thermal dissipation
Topology optimization
Topology optimization
High power density
Thermal dissipation
GaAs devices
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Summary:This paper presents an analysis of the influence of the active zone topology on the heat dissipation for GaAs devices. It highlights the influence of the width and the form factor on the thermal behavior of the device. It also shows the sensitivity of the thermal resistance to the increase of the dissipated power. For multi-cellular structures the impact of the thermal coupling between heat sources is studied.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(02)00136-3