Metal–insulator transition in quantum dot arrays

We present evidence for a re-entrant metal–insulator transition that arises in quantum dot arrays as the gate voltage is used to sweep their density of states past the Fermi level. The form of the temperature variation of the conductance observed in these arrays can be accounted for using a function...

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Bibliographic Details
Published inSuperlattices and microstructures Vol. 27; no. 5-6; pp. 311 - 314
Main Authors Shailos, A, El Hassan, M, Prasad, C, Bird, J.P, Ferry, D.K, Lin, L.-H, Aoki, N, Nakao, K, Ochiai, Y, Ishibashi, K, Aoyagi, Y, Sugano, T
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.05.2000
Subjects
localization, metal–insulator transition, quantum dots
localization, metal–insulator transition, quantum dots
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Summary:We present evidence for a re-entrant metal–insulator transition that arises in quantum dot arrays as the gate voltage is used to sweep their density of states past the Fermi level. The form of the temperature variation of the conductance observed in these arrays can be accounted for using a functional form derived from studies of the metal–insulator transition in two dimensions, although the values obtained for the fit parameters suggest that the behavior we observe here may be quite distinct to that found in two dimensions.
ISSN:0749-6036
1096-3677
DOI:10.1006/spmi.2000.0832