Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates

In this paper, we investigate the effect of pressure on the growth mode of high quality (10-11) GaN using an epitaxial lateral over growth (ELO) technique by metal organic chemical vapor deposition (MOCVD). Two pressure growth conditions, high pressure (HP) 1013 mbar and low pressure growth (LP) 500...

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Bibliographic Details
Published inChinese physics B Vol. 24; no. 5; pp. 57801 - 1-057801-5
Main Authors Liu, Jian-Ming, Zhang, Jie, Lin, Wen-Yu, Ye, Meng-Xin, Feng, Xiang-Xu, Zhang, Dong-Yan, Steve, Ding, Xu, Chen-Ke, Liu, Bao-Lin
Format Journal Article
LanguageEnglish
Published 01.05.2015
Subjects
Crystals
Density
Dislocation density
Epitaxial growth
Gallium nitrides
Light emission
Low pressure
Photoluminescence
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Summary:In this paper, we investigate the effect of pressure on the growth mode of high quality (10-11) GaN using an epitaxial lateral over growth (ELO) technique by metal organic chemical vapor deposition (MOCVD). Two pressure growth conditions, high pressure (HP) 1013 mbar and low pressure growth (LP) 500 mbar, are employed during growth. In the high pressure growth conditions, the crystal quality is improved by decreasing the dislocation and stack fault density in the strip connection locations. The room temperature photoluminescence measurement also shows that the light emission intensity increases three times using the HP growth condition compared with that using the LP growth conditions. In the low temperature (77 K) photoluminescence, the defects-related peaks are very obvious in the low pressure growth samples. This result also indicates that the crystal quality is improved using the high pressure growth conditions.
Bibliography:ObjectType-Article-1
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content type line 23
ISSN:1674-1056
1741-4199
DOI:10.1088/1674-1056/24/5/057801