Photosensitive properties of Schottky type photodiodes prepared by spin coating of isoniazid Schiff base thin film on p-Si
In this study, a layer of isonicotinohydrazide and pyrene-based Schiff base (PyMIs) was formed on the front side of a p-Si semiconductor using the spin coating method, and an Al/PyMIs/p-Si/Al diode was fabricated. The I - V characteristics of the fabricated diode were measured under dark and from 20...
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Published in | Optical and quantum electronics Vol. 56; no. 6 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
New York
Springer US
09.05.2024
|
Subjects | |
Online Access | Get full text |
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Summary: | In this study, a layer of isonicotinohydrazide and pyrene-based Schiff base (PyMIs) was formed on the front side of a p-Si semiconductor using the spin coating method, and an Al/PyMIs/p-Si/Al diode was fabricated. The
I
-
V
characteristics of the fabricated diode were measured under dark and from 20 to 100 mW/cm
2
illumination intensities for both forward and reverse bias. Diode parameters, including saturation current (
), ideality factor (
n
), and barrier height (
) were investigated for all measurements based on thermionic emission theory. The values
n
changed from 2.51 to 2.05, and the
changed from 0.77 eV to 0.86 eV as light intensity increased from dark to 100 mW/cm
2
. The series resistance (
) values of the diode were investigated using the modified Norde’s function and Cheung’s functions. An analysis of the forward
plot of Al/PyMIs/p-Si (MOmS)-type diode specified the carrier transport domination by ohmic conduction in the lower bias regions, by the space-charge-limited current (SCLC) at medium bias regions and the trap-charge limit current (TCLC) transport mechanism at higher bias regions. The fabricated diode exhibited typical photodiode behavior with reverse current values increasing from 9.13 × 10
− 6
A to 1.05 × 10
− 4
A, respectively. Furthermore,
characteristics illuminated from 20 to 100 mW/cm
2
were also studied, and they indicated that the Al/PyMIs/p-Si diode could operate in a photovoltaic regime. |
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ISSN: | 1572-817X 1572-817X |
DOI: | 10.1007/s11082-024-06770-4 |