Solution-Processed Bootstrapped Organic Inverters Based on P3HT With a High- k Gate Dielectric Material

In this letter, the integration of a high-k gate dielectric has been demonstrated for achieving low-operating-voltage organic field-effect transistors (OFETs) and circuits based on solution-processed poly(3-hexylthiophene) (P3HT). We have successfully demonstrated all-p-type organic circuits based o...

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Bibliographic Details
Published inIEEE electron device letters Vol. 30; no. 5; pp. 484 - 486
Main Authors Raval, H.N., Tiwari, S.P., Navan, R.R., Mhaisalkar, S.G., Rao, V.R.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.05.2009
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Bootstrapping
Circuits
Dielectrics
Electric potential
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Fabrication
Gain
Gates
High K dielectric materials
high- k dielectric
High-K gate dielectrics
inverter
Inverters
OFETs
organic field-effect transistor (OFET)
Organic materials
Organic semiconductors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor materials
Switching
Transistors
Voltage
Inverter
Bootstrap circuits
Switching
Field effect transistor
high-k dielectric
Low voltage
Direct current
p type semiconductor
organic field-effect transistor (OFET)
High k dielectric
Index Terms―Bootstrapping
Current gain
Growth from solution
Organic electronics
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Summary:In this letter, the integration of a high-k gate dielectric has been demonstrated for achieving low-operating-voltage organic field-effect transistors (OFETs) and circuits based on solution-processed poly(3-hexylthiophene) (P3HT). We have successfully demonstrated all-p-type organic circuits based on P3HT operating at below 4 V supply voltage. The switching behavior is improved by using the bootstrapping technique, with the bootstrapped inverter showing good results with a dc gain ( A v ) of - 1.7 and V OH and V OL values of 3.3 and 0.35 V, respectively. The output swing of the bootstrapped inverter is improved by about 40% when compared to that of simple all-p-type inverters, as demonstrated by using experimental characterizations.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2009.2016679