Pressure dependence of elastic constants using Landau free energy and a numerical modeling analysis of W-InN

In this work, we study the pressure dependence of elastic constants of wurtzite indium nitride semiconductor based on Landau free energy expansion. Elastic constants are obtained as functions pressure up to second order. We have also evaluated the bulk modulus (B) and anisotropies of compressibility...

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Bibliographic Details
Published inPhase transitions Vol. 97; no. 4-5; pp. 289 - 295
Main Authors Mukherjee, Prabir K., Tripathi, Gouri S.
Format Journal Article
LanguageEnglish
Published Abingdon Taylor & Francis 03.05.2024
Taylor & Francis Ltd
Subjects
Bulk modulus
Compressibility
Constants
Elastic constants
Elastic properties
First principles
Free energy
Indium
Indium nitride
Landau theory
Numerical models
phase transition
Pressure
Pressure dependence
Wurtzite
Wurtzite InN
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Summary:In this work, we study the pressure dependence of elastic constants of wurtzite indium nitride semiconductor based on Landau free energy expansion. Elastic constants are obtained as functions pressure up to second order. We have also evaluated the bulk modulus (B) and anisotropies of compressibility and shear for wurtzite indium nitride as functions of pressure. Agreement with previously obtained results based on first-principles calculations is found to be satisfactory.
ISSN:0141-1594
1029-0338
DOI:10.1080/01411594.2024.2329377