Effect of backgating on the field distribution in planar thin-film GaAs structures
The distribution of the electric field in planar film–substrate GaAs structures under backgating is considered. It is shown that backgating can make the film exhibit a long-length region of a low-gradient electric field exceeding the threshold of N-type negative differential mobility, the magnitude...
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Published in | Microelectronics Vol. 32; no. 12; pp. 979 - 982 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.12.2001
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Subjects | |
Online Access | Get full text |
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Summary: | The distribution of the electric field in planar film–substrate GaAs structures under backgating is considered. It is shown that backgating can make the film exhibit a long-length region of a low-gradient electric field exceeding the threshold of N-type negative differential mobility, the magnitude of negative differential mobility in this region being high enough. At values of the film doping density and film thickness typical of GaAs transferred-electron devices, this region can be as long as several tens of micrometers. The underlying physical mechanism is discussed. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1879-2391 0026-2692 1879-2391 |
DOI: | 10.1016/S0026-2692(01)00083-0 |