Effect of backgating on the field distribution in planar thin-film GaAs structures

The distribution of the electric field in planar film–substrate GaAs structures under backgating is considered. It is shown that backgating can make the film exhibit a long-length region of a low-gradient electric field exceeding the threshold of N-type negative differential mobility, the magnitude...

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Published inMicroelectronics Vol. 32; no. 12; pp. 979 - 982
Main Authors Gorev, Nikolai B., Kodzhespirova, Inna F., Kovalenko, Yury A., Privalov, Evgeny N., Prokhorov, Eugenio F.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.12.2001
Subjects
Backgating
GaAs structures
Negative differential mobility
GaAs structures
Negative differential mobility
Backgating
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Summary:The distribution of the electric field in planar film–substrate GaAs structures under backgating is considered. It is shown that backgating can make the film exhibit a long-length region of a low-gradient electric field exceeding the threshold of N-type negative differential mobility, the magnitude of negative differential mobility in this region being high enough. At values of the film doping density and film thickness typical of GaAs transferred-electron devices, this region can be as long as several tens of micrometers. The underlying physical mechanism is discussed.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1879-2391
0026-2692
1879-2391
DOI:10.1016/S0026-2692(01)00083-0