Effect of quantum dots on InAs/GaAs p-i-p quantum dots infrared photodetectors

In this paper, the InAs/GaAs p-i-p quantum dots infrared photodetectors (QDIPs) were successfully demonstrated by Apsys software. It consists of Al 0.3 Ga 0.7 As/GaAs structure to reduce dark current and InAs quantum dots (QDs) embedded in In 0.15 Ga 0.85 As as an active layer. The effect of structu...

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Bibliographic Details
Published inIntegrated ferroelectrics Vol. 178; no. 1; pp. 73 - 78
Main Authors Zhang, B., Lu, H. D., Guo, F. M.
Format Journal Article
LanguageEnglish
Published Philadelphia Taylor & Francis 12.02.2017
Taylor & Francis Ltd
Subjects
Dark current
Gallium arsenide
InAs quantum dots
Indium arsenides
Infrared detectors
infrared photodetectors
Noise prediction
photocurrent
Photoelectric effect
Photoelectric emission
Photometers
Quantum dots
Signal to noise ratio
simulation
Thickness
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Summary:In this paper, the InAs/GaAs p-i-p quantum dots infrared photodetectors (QDIPs) were successfully demonstrated by Apsys software. It consists of Al 0.3 Ga 0.7 As/GaAs structure to reduce dark current and InAs quantum dots (QDs) embedded in In 0.15 Ga 0.85 As as an active layer. The effect of structure parameters of InAs QDs on the dark current, photocurrent of the device and SNR (signal to noise) is discussed respectively, including different QDs density, the number of QD layer, GaAs thickness between QDs layers and Al 0.3 Ga 0.7 As, and GaAs thickness between two the QD layers.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584587.2017.1324715