The simulation of electron transport of dielectric materials under high-energy electron storms?

• Published in: Radiation effects and defects in solids Vol. 179; no. 1-2; pp. 127 - 135
• Main Authors: Yin, Liyuan, Wang, Zujun, Wu, Quan, Zhang, Rongliang, Tang, Ning, Mao, Yibin, Ma, Ding, Yan, Shixing, Guo, Yanling, Chen, Lin
• Format: Journal Article
• Language: English
• Published: Abingdon Taylor & Francis 02.01.2024; Taylor & Francis Ltd
• Subjects: bias voltage; Charge density; Deep charging; Dielectrics; Electron transport; Electrons; Energy; Flat plates; High energy electrons; High voltage; high-energy electron storm; Ketones; Polyether ether ketones; Power plants; Solar energy; Solar generators; Solar power; Solar radiation shielding; space charge; Spatial distribution; Storms; Transport processes; Trapped charge
• ISSN: 1042-0150; 1029-4953
• DOI: 10.1080/10420150.2024.2318719

When the space high-energy electron storm is generated in the Space Solar Power Station, the high voltage biased on the dielectric materials is a key factor affecting the deep charging process. In this work, the electron transport process in poly-ether-ether-ketone flat plates has been studied by the Geant4 simulation. It is found that the trapped charge density enhances 2-3 orders of magnitude under high-energy electron storms and that the trapped charge density gradually increases with the increase of the radiation time. The number of electrons deposited and charge migration decreases as the shielding thickness increases, while the trapped charge density decreases significantly and its spatial distribution gradually changes to a concave distribution.