Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer

We report the first observation of the room temperature stimulated emission near UV from a GaN film which was grown by metalorganic vapor phase epitaxy on a (0001) sapphire substrate using an AlN buffer layer. This indicates that the GaN film is promising for the realization of an UV laser diode.

Saved in:

Bibliographic Details
Published in	Japanese Journal of Applied Physics Vol. 29; no. 2A; p. L205
Main Authors	Amano, Hiroshi, Asahi, Tsunemori, Akasaki, Isamu
Format	Journal Article
Language	English
Published	01.02.1990
Online Access	Get full text

Cover

Loading…

More Information
Summary:	We report the first observation of the room temperature stimulated emission near UV from a GaN film which was grown by metalorganic vapor phase epitaxy on a (0001) sapphire substrate using an AlN buffer layer. This indicates that the GaN film is promising for the realization of an UV laser diode.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/JJAP.29.L205