Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer
We report the first observation of the room temperature stimulated emission near UV from a GaN film which was grown by metalorganic vapor phase epitaxy on a (0001) sapphire substrate using an AlN buffer layer. This indicates that the GaN film is promising for the realization of an UV laser diode.
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Published in | Japanese Journal of Applied Physics Vol. 29; no. 2A; p. L205 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
01.02.1990
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Online Access | Get full text |
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Summary: | We report the first observation of the room temperature stimulated emission near UV from a GaN film which was grown by metalorganic vapor phase epitaxy on a (0001) sapphire substrate using an AlN buffer layer. This indicates that the GaN film is promising for the realization of an UV laser diode. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.29.L205 |