Reduction of Efficiency Droop and Modification of Polarization Fields of InGaN-Based Green Light-Emitting Diodes via Mg-Doping in the Barriers

We demonstrate that the Mg-doping in barriers can partially screen the polariza tion heids of InGaN-based green light-emitting diodes. The photocurrent spectra show that the Mg-doping samples have smaller polariza tion fields and the blue shift of the peak with increasing current is observed. The re...

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Published inChinese physics letters Vol. 30; no. 8; pp. 87101 - 1-087101-3
Main Authors Zhang, Ning, Liu, Zhe, Si, Zhao, Ren, Peng, Wang, Xiao-Dong, Feng, Xiang-Xu, Dong, Peng, Du, Cheng-Xiao, Zhu, Shao-Xin, Fu, Bing-Lei, Lu, Hong-Xi, Li, Jin-Min, Wang, Jun-Xi
Format Journal Article
LanguageEnglish
Published 01.08.2013
Subjects
Barriers
Injection current
Light-emitting diodes
Magnesium
Photocurrent
Reduction
Spectra
Titanium dioxide
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Summary:We demonstrate that the Mg-doping in barriers can partially screen the polariza tion heids of InGaN-based green light-emitting diodes. The photocurrent spectra show that the Mg-doping samples have smaller polariza tion fields and the blue shift of the peak with increasing current is observed. The reduction of polariza tion fields can be attributed to the screening of the impurity holes generated by the Mg atoms in the barriers. The efficiency droop is sensitive to the Mg-doping concentration in barriers, while the sample with Mg concentration of 5 x 10 super(19) cm super(-3) exhibits the lowest efficiency degradation of 12.4% at a high injection current.
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/30/8/087101