WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors
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Published in | Japanese Journal of Applied Physics Vol. 48; no. 11; p. 111003 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.11.2009
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Online Access | Get full text |
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ISSN: | 0021-4922 1347-4065 |
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DOI: | 10.1143/JJAP.48.111003 |