A low-phase-noise ring oscillator with coarse and fine tuning in a standard CMOS process

A low-phase-noise wideband ring oscillator with coarse and fine tuning techniques implemented in a standard 65 nm CMOS process is presented. Direct frequency modulation in the ring oscillator is analyzed and a switched capacitor array is introduced to produce the lower VCO gain required to suppress...

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Bibliographic Details
Published inJournal of semiconductors Vol. 33; no. 7; pp. 75004 - 1-4
Main Authors Gao, Haijun, Sun, Lingling, Kuang, Xiaofei, Lou, Liheng
Format Journal Article
LanguageEnglish
Published 01.07.2012
Subjects
Capacitors
CMOS
Oscillators
Semiconductors
Tuning
Voltage
Voltage controlled oscillators
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Summary:A low-phase-noise wideband ring oscillator with coarse and fine tuning techniques implemented in a standard 65 nm CMOS process is presented. Direct frequency modulation in the ring oscillator is analyzed and a switched capacitor array is introduced to produce the lower VCO gain required to suppress this effect. A twodimensional high-density stacked MOM-capacitor was adopted as the switched capacitor to make the proposed ring VCO compatible with standard CMOS processes. The designed ring VCO exhibits an output frequency from 480 to 1100 MHz, resulting in a tuning range of 78%, and the measured phase noise is -120 dBc/Hz 1 MHz at 495 MHz output. The VCO core consumes 3.84 mW under a 1.2 V supply voltage and the corresponding FOM is -169 dBc/Hz.
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ISSN:1674-4926
DOI:10.1088/1674-4926/33/7/075004