Electrical characterization of different DEPFET designs on die level

• Published in: Journal of instrumentation Vol. 9; no. 1; p. C01020
• Main Authors: Bergbauer, B, Aschauer, S, Bähr, A, Hermenau, K, Horstmann, J, Lauf, T, Lechner, P, Majewski, P, Meidinger, N, Reiffers, J, Richter, R, Sandow, C, Schaller, G, Schopper, F, Stefanescu, A, Strüder, L, Treis, J
• Format: Journal Article
• Language: English
• Published: 01.01.2014
• Subjects: Arrays; Design engineering; Detectors; Electrical properties; Focal plane; Pixels; Prototypes; Semiconductor devices; Transistors
• ISSN: 1748-0221; 1748-0221
• DOI: 10.1088/1748-0221/9/01/C01020

For the future X-ray astronomy project Advanced Telescope for High ENergy Astrophysics plus (ATHENA+) wafer-scale DEpleted P-channel Field Effect Transistor (DEPFET) detectors are proposed as Focal Plane Array (FPA) for the Wide Field Imager (WFI). Prototype structures with different pixel layouts, each consisting of 64 x 64 pixels, were fabricated to study four different DEPFET designs. We report on the results of the electrical characterization of the different DEPFET designs. The transistor properties of the DEPFET structures are investigated in order to determine whether the design intentions are reflected in the transistor characteristics. In addition yield and homogeneity of the prototypes can be studied on die, wafer and batch level for further improvement of the production technology with regard to wafer-scale devices. These electrical characterization measurements prove to be a reliable tool to pre-select the best detector dies for further integration into full detector systems.