Infrared radiation of zinc selenide single crystals

• Published in: Journal of luminescence Vol. 114; no. 1; pp. 9 - 14
• Main Authors: Avdonin, A.N., Ivanova, G.N., Iurieva, T.A., Kolibaba, G.V., Nedeoglo, D.D., Nedeoglo, N.D., Sirkeli, V.P.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.07.2005; Elsevier
• Subjects: Associative defects; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Ii-vi semiconductors; Infrared photoluminescence; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; 78.30.Fs; 78.55.Et; Zinc selenide; 71.55.Gs; Associative defects; Infrared photoluminescence; Localized states; Impurity density; Excitation intensity; Doping; Photoluminescence; Zinc selenides; Gold additions; Monocrystals; Acceptor center; 78.55.Et Infrared phololuminescence; Infrared radiation
• ISSN: 0022-2313; 1872-7883
• DOI: 10.1016/j.jlumin.2004.11.006

Long-wave photoluminescence (PL) spectra of both as-grown and Au-doped n-ZnSe single crystals are studied in the temperature range from 81 to 300 K. A narrow band of infrared (IR) radiation centered at 878 nm (1.411 eV) manifests itself in the low-temperature PL spectrum. It is established that this band intensity first increases and then decreases with increasing concentration of doping impurity. With increasing excitation radiation intensity, spectral position of the IR PL band is unchanged and its intensity increases under the linear law. With increasing excitation radiation wavelength, the IR PL band intensity increases, it becomes narrower and shifts towards long wavelengths. It is shown that the observed IR radiation is caused by recombination of free electrons with holes localized on associative acceptors ( V Zn - Au i + ) - in the ZnSe:Zn:Au crystals or ( V Zn - D + ) - in the undoped crystals.