A facile mold-free micromechanical method for patterning multilayer graphene by utilizing the difference in interfacial adhesion forces

• Published in: Diamond and related materials Vol. 120; p. 108686
• Main Authors: S., Ragul, Krishnan, Devaraj, Dutta, Soumya, Ray, Debdutta
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.12.2021; Elsevier BV
• Subjects: Adhesion; Atomic force microscopy; Density functional theory; DFT; Graphene; Multilayer; Multilayers; Patterning; Photoresists; Polymers; Silica; Silicon dioxide; Patterning; DFT; Multilayer; Graphene; Adhesion
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/j.diamond.2021.108686

We report a method to pattern graphene on silicon dioxide by a physical process utilizing its inter-facial properties with metal, silicon dioxide and polymer photoresist. The process utilizes the difference in adhesion energies of various interfaces between these materials with graphene. The mechanical forces involved in this process are strong enough to pattern multiple layers of graphene at once. As the sacrificial patterning layer is in flush contact with graphene, the process does not suffer from residual layers at the undesired sites, as in polymer-based stamp transfer techniques. We have calculated the adhesion energies of these interfaces using density functional theory (DFT), theoretical estimation and experimental methods using Atomic Force Microscopy (AFM). These observations are in good agreement with each other and defend the feasibility of the proposed graphene patterning method. [Display omitted] •One step patterning of multilayer graphene by mechanical means•Facilitated by difference in adhesion energies presented at various interfaces•Experimental validation was done with force-distance measurements using Atomic force microscopy•Supported by density functional theory and analytical calculations of the adhesion at the interfaces•A stamp free process to bypass the disadvantages of over-impregnated inking effects