Preparation of Y-Ba-Cu-O film on metal substrate with buffer layers deposited by ion beam assisted deposition

Ion beam assisted pulsed laser deposition of biaxially aligned yttria-stabilized zirconia (YSZ) was used to produce a buffer layer for YBCO film on polycrystalline metallic substrate.The YSZ layers were biaxially aligned with (001) axis normal to the substrate.The minimum FWHM of (111) phi-scan of t...

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Published inScience China. Mathematics Vol. 40; no. 12; pp. 1305 - 1310
Main Author 熊旭明 周岳亮 吕惠宾 陈正豪 杨国桢
Format Journal Article
LanguageEnglish
Published Heidelberg Springer Nature B.V 01.12.1997
Subjects
beam
bombardment
buffer
Buffer layers
Copper
Epitaxial growth
Ion
Ion beam assisted deposition
Laser ablation
layer
metallic
Pulsed laser deposition
Pulsed lasers
substrate
Substrates
thin
Thin films
YBCO
YSZ
Yttria-stabilized zirconia
Yttrium
Yttrium barium copper oxide
Yttrium oxide
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Summary:Ion beam assisted pulsed laser deposition of biaxially aligned yttria-stabilized zirconia (YSZ) was used to produce a buffer layer for YBCO film on polycrystalline metallic substrate.The YSZ layers were biaxially aligned with (001) axis normal to the substrate.The minimum FWHM of (111) phi-scan of the YSZ was 19,and the minimum FWHM of the rocking curve of YSZ was 4.5.Highly c-axis oriented biaxially aligned YBCO thin films were epitaxially grown by laser ablation on these layers,with JC(77K,0T)=2.1×105A/cm2,Tc0=90.5 K.
Bibliography:XIONG Xuming ZHOU Yueliang LU HuibinCHEN Zhenghao and YANG Guozhen(Laboratory of Optical Physics,Institute of Physics and Center for Condensed Matter Physics,Chinese Academy of Sciences,Beijing 100080,China)
11-5837/O1
ISSN:1674-7283
1006-9283
1869-1862
1862-2763
DOI:10.1007/BF02876376