The influence of electron energy quantization in a space-charge region on the accumulation capacitance of InAs metal-oxide-semiconductor capacitors

The influence of electron energy quantization in a space-charge region on the accumulation capacitance of the InAs-based metal-oxide-semiconductor capacitors (MOSCAPs) has been investigated by modeling and comparison with the experimental data from Au/anodic layer(4-20 nm)/n-InAs(111)A MOSCAPs. The...

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Bibliographic Details
Published inJournal of applied physics Vol. 118; no. 12
Main Authors Kovchavtsev, A. P., Tsarenko, A. V., Guzev, A. A., Aksenov, M. S., Polovinkin, V. G., Nastovjak, A. E., Valisheva, N. A.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 28.09.2015
Subjects
Accumulation
Applied physics
CAPACITANCE
CAPACITORS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
DIELECTRIC MATERIALS
Electrical measurement
Electron energy
INDIUM ARSENIDES
INTERFACES
LAYERS
Measurement
Metal oxide semiconductors
METALS
OXIDES
POISSON EQUATION
QUANTIZATION
SIMULATION
SPACE CHARGE
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Summary:The influence of electron energy quantization in a space-charge region on the accumulation capacitance of the InAs-based metal-oxide-semiconductor capacitors (MOSCAPs) has been investigated by modeling and comparison with the experimental data from Au/anodic layer(4-20 nm)/n-InAs(111)A MOSCAPs. The accumulation capacitance for MOSCAPs has been calculated by the solution of Poisson equation with different assumptions and the self-consistent solution of Schrödinger and Poisson equations with quantization taken into account. It was shown that the quantization during the MOSCAPs accumulation capacitance calculations should be taken into consideration for the correct interface states density determination by Terman method and the evaluation of gate dielectric thickness from capacitance-voltage measurements.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4931772