Combustion-process derived comparable performances of Zn-(In:Sn)-O thin-film transistors with a complete miscibility
Amorphous zinc-indium-tin oxide (a-ZITO) thin-film transistors (TFTs) have been prepared using a low-temperature combustion process, with an emphasis on complete miscibility of In and Sn contents. The a-ZITO TFTs were comparatively studied in detail, especially for the working stability. The a-ZITO...
Saved in:
| Published in | Applied physics letters Vol. 105; no. 13 |
|---|---|
| Main Authors | , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Melville
American Institute of Physics
29.09.2014
|
| Subjects | |
| Online Access | Get full text |
| ISSN | 0003-6951 1077-3118 |
| DOI | 10.1063/1.4896990 |
Cover
Loading…
| Abstract | Amorphous zinc-indium-tin oxide (a-ZITO) thin-film transistors (TFTs) have been prepared using a low-temperature combustion process, with an emphasis on complete miscibility of In and Sn contents. The a-ZITO TFTs were comparatively studied in detail, especially for the working stability. The a-ZITO TFTs all exhibited acceptable and excellent behaviors from Sn-free TFTs to In-free TFTs. The obtained a-ZTO TFTs presented a field-effect mobility of 1.20 cm2 V−1 s−1, an on/off current ratio of 4.89 × 106, and a long-term stability under positive bias stress, which are comparable with those of the a-ZIO TFTs. The In-free a-ZTO TFTs are very potential for electrical applications with a low cost. |
|---|---|
| AbstractList | Amorphous zinc-indium-tin oxide (a-ZITO) thin-film transistors (TFTs) have been prepared using a low-temperature combustion process, with an emphasis on complete miscibility of In and Sn contents. The a-ZITO TFTs were comparatively studied in detail, especially for the working stability. The a-ZITO TFTs all exhibited acceptable and excellent behaviors from Sn-free TFTs to In-free TFTs. The obtained a-ZTO TFTs presented a field-effect mobility of 1.20 cm2 V−1 s−1, an on/off current ratio of 4.89 × 106, and a long-term stability under positive bias stress, which are comparable with those of the a-ZIO TFTs. The In-free a-ZTO TFTs are very potential for electrical applications with a low cost. Amorphous zinc-indium-tin oxide (a-ZITO) thin-film transistors (TFTs) have been prepared using a low-temperature combustion process, with an emphasis on complete miscibility of In and Sn contents. The a-ZITO TFTs were comparatively studied in detail, especially for the working stability. The a-ZITO TFTs all exhibited acceptable and excellent behaviors from Sn-free TFTs to In-free TFTs. The obtained a-ZTO TFTs presented a field-effect mobility of 1.20 cm{sup 2} V{sup −1} s{sup −1}, an on/off current ratio of 4.89 × 10{sup 6}, and a long-term stability under positive bias stress, which are comparable with those of the a-ZIO TFTs. The In-free a-ZTO TFTs are very potential for electrical applications with a low cost. |
| Author | Feng, Lisha Jiang, Qingjun Dai, Wen Li, Xifeng Lu, Jianguo Yan, Weichao Sun, Rujie Cheng, Jipeng Ye, Zhizhen |
| Author_xml | – sequence: 1 givenname: Qingjun surname: Jiang fullname: Jiang, Qingjun – sequence: 2 givenname: Jianguo surname: Lu fullname: Lu, Jianguo – sequence: 3 givenname: Jipeng surname: Cheng fullname: Cheng, Jipeng – sequence: 4 givenname: Xifeng surname: Li fullname: Li, Xifeng – sequence: 5 givenname: Rujie surname: Sun fullname: Sun, Rujie – sequence: 6 givenname: Lisha surname: Feng fullname: Feng, Lisha – sequence: 7 givenname: Wen surname: Dai fullname: Dai, Wen – sequence: 8 givenname: Weichao surname: Yan fullname: Yan, Weichao – sequence: 9 givenname: Zhizhen surname: Ye fullname: Ye, Zhizhen |
| BackLink | https://www.osti.gov/biblio/22350799$$D View this record in Osti.gov |
| BookMark | eNptkEtrGzEUhUVJoE7SRf-BoJtmIVuPjDTqrpjmAYYs2m66ERrNFZaZkRxJbvG_j_KAQOjqcuC759x7ztBJTBEQ-szoklEpVmx51WupNf2AFowqRQRj_QlaUEoFkbpjH9FZKbsmOy7EAtV1modDqSFFss_JQSl4hBz-wohdmvc222ECvIfsU55tbABOHv-J5Otd_PYzXpJ7XLchEh-mGddsYwmlplzwv1C32D6bTFABz6G4MIQp1OMFOvV2KvDpdZ6j39c_fq1vyeb-5m79fUMc77tKBq6Y173s6cil4xxg5BS0g74bvWdDU5R6rpTtlfJKKhjZcCWoHKXonevEOfry4pvag6bFV3Bbl2IEVw3noqNK6zeq_f9wgFLNLh1ybIcZzrjseKclbdTlC-VyKiWDN_scZpuPhlHzVL1h5rX6xq7esS3aPnXcCgrTfzYeAfn3h30 |
| CitedBy_id | crossref_primary_10_1109_TED_2016_2555848 crossref_primary_10_1016_j_apsusc_2015_09_253 crossref_primary_10_3389_fchem_2021_754487 crossref_primary_10_1007_s00339_018_2280_3 crossref_primary_10_1039_C5RA09670G crossref_primary_10_1039_C7RA12642E crossref_primary_10_1007_s40843_018_9380_8 crossref_primary_10_1063_1_5031448 crossref_primary_10_1016_j_cap_2018_10_012 crossref_primary_10_1063_1_4906999 crossref_primary_10_1007_s00339_019_2646_1 crossref_primary_10_1016_j_jallcom_2019_03_277 crossref_primary_10_1039_D0TC02655G crossref_primary_10_1016_j_cossms_2023_101092 crossref_primary_10_1109_TED_2016_2542860 crossref_primary_10_1002_pssa_201532774 crossref_primary_10_1002_aelm_202000464 crossref_primary_10_1016_j_jallcom_2018_04_058 crossref_primary_10_1088_1674_4926_44_5_052101 crossref_primary_10_1021_acsami_5b02215 crossref_primary_10_1021_acsami_5b07148 crossref_primary_10_1039_C5RA02125A crossref_primary_10_1109_LED_2017_2707090 crossref_primary_10_1109_TED_2019_2913866 crossref_primary_10_1039_C6RA02924H crossref_primary_10_1021_acs_chemmater_7b03618 crossref_primary_10_1016_j_surfcoat_2016_07_052 crossref_primary_10_1002_aelm_202000233 |
| Cites_doi | 10.1063/1.3656444 10.1002/adma.200400368 10.1063/1.2425020 10.1063/1.4818728 10.1088/1468-6996/11/4/044305 10.1063/1.1843286 10.1063/1.2824758 10.1038/nmat3011 10.1016/0040-6090(95)06543-1 10.1002/adma.201103228 10.1063/1.2723543 10.1126/science.1083212 10.1039/c3ra44513e 10.1063/1.3159831 10.1109/TED.2014.2312947 10.1063/1.2977865 10.1021/ja403586x 10.1063/1.3524514 10.1002/adma.201204236 10.1021/ja100615r 10.1063/1.2990657 |
| ContentType | Journal Article |
| Copyright | 2014 AIP Publishing LLC. |
| Copyright_xml | – notice: 2014 AIP Publishing LLC. |
| DBID | AAYXX CITATION 8FD H8D L7M OTOTI |
| DOI | 10.1063/1.4896990 |
| DatabaseName | CrossRef Technology Research Database Aerospace Database Advanced Technologies Database with Aerospace OSTI.GOV |
| DatabaseTitle | CrossRef Technology Research Database Aerospace Database Advanced Technologies Database with Aerospace |
| DatabaseTitleList | Technology Research Database CrossRef |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering Physics |
| EISSN | 1077-3118 |
| ExternalDocumentID | 22350799 10_1063_1_4896990 |
| GroupedDBID | -DZ -~X .DC 1UP 2-P 23M 4.4 53G 5GY 5VS 6J9 A9. AAAAW AABDS AAGWI AAGZG AAPUP AAYIH AAYXX ABFTF ABJGX ABJNI ABRJW ABZEH ACBEA ACBRY ACGFO ACGFS ACLYJ ACNCT ACZLF ADCTM ADMLS AEGXH AEJMO AENEX AFATG AFHCQ AGKCL AGLKD AGMXG AGTJO AHSDT AIAGR AJJCW AJQPL ALEPV ALMA_UNASSIGNED_HOLDINGS AQWKA ATXIE AWQPM BDMKI BPZLN CITATION CS3 D0L EBS EJD F.2 F5P FDOHQ FFFMQ HAM M6X M71 M73 N9A NPSNA O-B P2P RIP RNS RQS SJN TAE TN5 UPT WH7 XJE YZZ ~02 8FD H8D L7M 0ZJ AAEUA ABPTK AGIHO ESX OTOTI UCJ UE8 |
| ID | FETCH-LOGICAL-c285t-b271f98680d26c22eed20e9ce85dff1bd2000f277a877f767ed1b4306d638cc53 |
| ISSN | 0003-6951 |
| IngestDate | Thu May 18 22:35:07 EDT 2023 Mon Jun 30 06:57:10 EDT 2025 Tue Jul 01 04:19:14 EDT 2025 Thu Apr 24 22:57:15 EDT 2025 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 13 |
| Language | English |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c285t-b271f98680d26c22eed20e9ce85dff1bd2000f277a877f767ed1b4306d638cc53 |
| Notes | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
| PQID | 2126525960 |
| PQPubID | 2050678 |
| ParticipantIDs | osti_scitechconnect_22350799 proquest_journals_2126525960 crossref_primary_10_1063_1_4896990 crossref_citationtrail_10_1063_1_4896990 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2014-09-29 20140929 |
| PublicationDateYYYYMMDD | 2014-09-29 |
| PublicationDate_xml | – month: 09 year: 2014 text: 2014-09-29 day: 29 |
| PublicationDecade | 2010 |
| PublicationPlace | Melville |
| PublicationPlace_xml | – name: Melville – name: United States |
| PublicationTitle | Applied physics letters |
| PublicationYear | 2014 |
| Publisher | American Institute of Physics |
| Publisher_xml | – name: American Institute of Physics |
| References | (2023070515315484200_c16) 2008; 93 (2023070515315484200_c19) 2007; 90 (2023070515315484200_c1) 2012; 24 (2023070515315484200_c7) 2010; 97 (2023070515315484200_c10) 2011; 10 (2023070515315484200_c20) 2008; 92 (2023070515315484200_c5) 2013; 135 (2023070515315484200_c8) 2013; 25 2023070515315484200_c12 (2023070515315484200_c3) 2003; 300 (2023070515315484200_c21) 2011; 110 (2023070515315484200_c13) 1995; 263 (2023070515315484200_c22) 2006; 89 (2023070515315484200_c17) 2009; 95 (2023070515315484200_c6) 2013; 103 (2023070515315484200_c9) 2005; 86 (2023070515315484200_c11) 2010; 132 (2023070515315484200_c18) 2008; 93 (2023070515315484200_c4) 2010; 11 (2023070515315484200_c15) 2014; 61 (2023070515315484200_c2) 2014; 4 (2023070515315484200_c14) 2005; 17 |
| References_xml | – volume: 110 start-page: 084509 year: 2011 ident: 2023070515315484200_c21 publication-title: J. Appl. Phys. doi: 10.1063/1.3656444 – volume: 17 start-page: 590 year: 2005 ident: 2023070515315484200_c14 publication-title: Adv. Mater. doi: 10.1002/adma.200400368 – volume: 89 start-page: 263513 year: 2006 ident: 2023070515315484200_c22 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2425020 – volume: 103 start-page: 082109 year: 2013 ident: 2023070515315484200_c6 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4818728 – volume: 11 start-page: 044305 year: 2010 ident: 2023070515315484200_c4 publication-title: Sci. Technol. Adv. Mater. doi: 10.1088/1468-6996/11/4/044305 – volume: 86 start-page: 013503 year: 2005 ident: 2023070515315484200_c9 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1843286 – volume: 92 start-page: 033502 year: 2008 ident: 2023070515315484200_c20 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2824758 – volume: 10 start-page: 382 year: 2011 ident: 2023070515315484200_c10 publication-title: Nature Mater. doi: 10.1038/nmat3011 – volume: 263 start-page: 37 year: 1995 ident: 2023070515315484200_c13 publication-title: Thin Solid Films doi: 10.1016/0040-6090(95)06543-1 – volume: 24 start-page: 2945 year: 2012 ident: 2023070515315484200_c1 publication-title: Adv. Mater. doi: 10.1002/adma.201103228 – volume: 90 start-page: 192101 year: 2007 ident: 2023070515315484200_c19 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2723543 – volume: 300 start-page: 1269 year: 2003 ident: 2023070515315484200_c3 publication-title: Science doi: 10.1126/science.1083212 – volume: 4 start-page: 3145 year: 2014 ident: 2023070515315484200_c2 publication-title: RSC Adv. doi: 10.1039/c3ra44513e – volume: 95 start-page: 013502 year: 2009 ident: 2023070515315484200_c17 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3159831 – volume: 61 start-page: 1431 year: 2014 ident: 2023070515315484200_c15 publication-title: IEEE Trans. Electron Devices doi: 10.1109/TED.2014.2312947 – volume: 93 start-page: 093504 year: 2008 ident: 2023070515315484200_c16 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2977865 – ident: 2023070515315484200_c12 – volume: 135 start-page: 10729 year: 2013 ident: 2023070515315484200_c5 publication-title: J. Am. Chem. Soc. doi: 10.1021/ja403586x – volume: 97 start-page: 233502 year: 2010 ident: 2023070515315484200_c7 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3524514 – volume: 25 start-page: 2994 year: 2013 ident: 2023070515315484200_c8 publication-title: Adv. Mater. doi: 10.1002/adma.201204236 – volume: 132 start-page: 10352 year: 2010 ident: 2023070515315484200_c11 publication-title: J. Am. Chem. Soc. doi: 10.1021/ja100615r – volume: 93 start-page: 123508 year: 2008 ident: 2023070515315484200_c18 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2990657 |
| SSID | ssj0005233 |
| Score | 2.292468 |
| Snippet | Amorphous zinc-indium-tin oxide (a-ZITO) thin-film transistors (TFTs) have been prepared using a low-temperature combustion process, with an emphasis on... |
| SourceID | osti proquest crossref |
| SourceType | Open Access Repository Aggregation Database Enrichment Source Index Database |
| SubjectTerms | AMORPHOUS STATE Applied physics CARRIER MOBILITY COMBUSTION CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY INDIUM OXIDES Indium tin oxides Miscibility Semiconductor devices SOLUBILITY STABILITY Thin film transistors THIN FILMS Tin TIN OXIDES TRANSISTORS ZINC OXIDES |
| Title | Combustion-process derived comparable performances of Zn-(In:Sn)-O thin-film transistors with a complete miscibility |
| URI | https://www.proquest.com/docview/2126525960 https://www.osti.gov/biblio/22350799 |
| Volume | 105 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Lb9NAEF6FVEhwQFBAFApaIQ5F0RY_115uFQ8VRCkorRRxsex9SEapHRGHQ389M_Zu7JAcChcrWW-yiefz7Mz4mxlCXiVFDi61J5kvpWIRNz4TXPtMS6MCeAtGCiY4n33lp5fR51k8G42uh9klTXEsr3fmlfyPVGEM5IpZsv8g2fWXwgC8BvnCESQMxxvJGG7mArtx1RVbdIT_iYJ1f2tlueVtXtSizw1oeRs_KoZmJVI6phgVYOdgfZYVM-X8CltGVMu2dIjLe-tY52BbT64wg7cl0248C3aGbBckWU7mbYZQT00sbUj6O-ySP1c9BWjVIgjPruqeZaAtRbhcaLup4tyWczArjRuzcQo_QlKFDWY43RsyLmx5Wd2pWy_BKKnVwE4fe_EQeOFORQ-WFcYcjqNUcNE1HN0spv3XJremHrYP3XmY-Zn96C2yF4CLAUp97-T92ZfpgCAUhq7fIv5uV5eKh2_W625YM-MaJL61p7eGysV9cs96GPSkg8sDMtLVPrk7qDu5T25_60T1kDTbEKIWQrSHEB1CiNaGAoSOPlVvp9Vrdk7X4KED8FAED82pAw8dgOcRufz44eLdKbONOJgM0rhhRZD4RqQ89VTAZRCAXRV4WmDHW2WMXyjM9zJwFfM0SUzCE638IgJnVIF2lzIOH5NxVVf6CaFp7hkOWkOoxIvyUBZC5Xkc8cgzkvu6OCBH7oJm0lapx2Yp82xLcAfk5XrqoivNsmvSIUolg7-IRZElssdkk4FRDI6QEHDaSSuzN_YyA2uOx0EMvv3TmyzxjNzp8X5Ixs2vlX4OlmpTvLCQ-gOBy5Ws |
| linkProvider | EBSCOhost |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Combustion-process+derived+comparable+performances+of+Zn-%28In%3ASn%29-O+thin-film+transistors+with+a+complete+miscibility&rft.jtitle=Applied+physics+letters&rft.au=Jiang%2C+Qingjun&rft.au=Lu%2C+Jianguo&rft.au=Cheng%2C+Jipeng&rft.au=Li%2C+Xifeng&rft.date=2014-09-29&rft.issn=0003-6951&rft.eissn=1077-3118&rft.volume=105&rft.issue=13&rft_id=info:doi/10.1063%2F1.4896990&rft.externalDBID=n%2Fa&rft.externalDocID=10_1063_1_4896990 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0003-6951&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0003-6951&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0003-6951&client=summon |