Combustion-process derived comparable performances of Zn-(In:Sn)-O thin-film transistors with a complete miscibility

• Published in: Applied physics letters Vol. 105; no. 13
• Main Authors: Jiang, Qingjun, Lu, Jianguo, Cheng, Jipeng, Li, Xifeng, Sun, Rujie, Feng, Lisha, Dai, Wen, Yan, Weichao, Ye, Zhizhen
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 29.09.2014
• Subjects: AMORPHOUS STATE; Applied physics; CARRIER MOBILITY; COMBUSTION; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; INDIUM OXIDES; Indium tin oxides; Miscibility; Semiconductor devices; SOLUBILITY; STABILITY; Thin film transistors; THIN FILMS; Tin; TIN OXIDES; TRANSISTORS; ZINC OXIDES
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4896990

Amorphous zinc-indium-tin oxide (a-ZITO) thin-film transistors (TFTs) have been prepared using a low-temperature combustion process, with an emphasis on complete miscibility of In and Sn contents. The a-ZITO TFTs were comparatively studied in detail, especially for the working stability. The a-ZITO TFTs all exhibited acceptable and excellent behaviors from Sn-free TFTs to In-free TFTs. The obtained a-ZTO TFTs presented a field-effect mobility of 1.20 cm2 V−1 s−1, an on/off current ratio of 4.89 × 106, and a long-term stability under positive bias stress, which are comparable with those of the a-ZIO TFTs. The In-free a-ZTO TFTs are very potential for electrical applications with a low cost.