The location of the lowest conduction band minima in gallium phosphide from bound exciton luminescence

• Published in: Journal of luminescence Vol. 14; no. 1; pp. 55 - 79
• Main Authors: Dean, P.J., Herbert, D.C.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.06.1976
• ISSN: 0022-2313; 1872-7883
• DOI: 10.1016/0022-2313(76)90037-5

Two weak satellite series with acceptor-independent displacement energies of 4.2 3 meV and 7.8 3 meV have been observed in the luminescence of excitons bound to neutral acceptors in GaP. These satellites contain broad background luminescence. Rather well defined superimposed peaks show relative strength which increases dramatically with decrease in exciton binding energy. The most plausible mechanism for these satellites involves bound exciton recombination with emission of one phonon to conserve momentum in the indirect transition and one or two further phonons to conserve momentum in g-type inter-valley scattering processes. This model is consistent with all known properties of the satellites and is strongly supported by a quantum-mechanical line width calculation. The narrow components arise from a diffuse tail on the bound exciton wave-function which is enhanced by the electron-hole correlation. The existence of this g-scattering process shows that the conduction band minima in GaP lie at 0.953 K max 〈100〉, not exactly at K max 〈100〉 as believed hitherto. This revision has important consequences for several properties of n-type GaP.