Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks
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| Published in | Microelectronics and reliability Vol. 48; no. 4; pp. 514 - 525 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
Oxford
Elsevier
01.04.2008
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| Subjects | |
| Online Access | Get full text |
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| Author | ATANASSOVA, E PASKALEVA, A NOVKOVSKI, N |
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| Cites_doi | 10.1109/LED.2007.891757 10.1147/rd.504.0387 10.1016/j.microrel.2006.06.006 10.1016/S0026-2692(98)00157-8 10.1016/S0040-6090(03)00027-0 10.1109/TDMR.2005.845880 10.1557/mrs2002.72 10.1007/s00339-005-3300-7 10.1016/S1369-7021(06)71540-1 10.1109/TDMR.2005.845236 10.1103/PhysRevLett.83.372 10.1063/1.341942 10.1016/j.mee.2006.01.043 10.1016/S0169-4332(98)00278-5 10.1063/1.323212 10.1063/1.1375003 10.1063/1.337204 10.1063/1.1361065 10.1063/1.359905 10.1016/S0026-2692(02)00120-9 10.1063/1.1884758 10.1109/TDMR.2005.845807 |
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| Keywords | Electron traps Charge carrier trapping Electric stress Wear Stress effects Leakage current High k dielectric Oxidation Reliability Capacitor Electrical characteristic Damaging |
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| References | Ribes (10.1016/j.microrel.2007.11.002_bib7) 2005; 5 Atanassova (10.1016/j.microrel.2007.11.002_bib9) 2007; 47 Avni (10.1016/j.microrel.2007.11.002_bib23) 1988; 64 DiMaria (10.1016/j.microrel.2007.11.002_bib20) 1976; 47 Wilk (10.1016/j.microrel.2007.11.002_bib2) 2001; 89 Busch (10.1016/j.microrel.2007.11.002_bib4) 2002; 27 Atanassova (10.1016/j.microrel.2007.11.002_bib14) 2006; 83 Bloechl (10.1016/j.microrel.2007.11.002_bib26) 1999; 83 Atanassova (10.1016/j.microrel.2007.11.002_bib12) 2003; 426 Lee (10.1016/j.microrel.2007.11.002_bib24) 2005; 5 Buchanan (10.1016/j.microrel.2007.11.002_bib21) 2006; vol. 220 Spassov (10.1016/j.microrel.2007.11.002_bib15) 2006; 82 Gusev (10.1016/j.microrel.2007.11.002_bib16) 2006; 50 Nissan-Cohen (10.1016/j.microrel.2007.11.002_bib22) 1986; 60 Atanassova (10.1016/j.microrel.2007.11.002_bib25) 2005; 97 Atanassova (10.1016/j.microrel.2007.11.002_bib10) 1999; 30 Zafar (10.1016/j.microrel.2007.11.002_bib8) 2005; 5 10.1016/j.microrel.2007.11.002_bib1 Houssa (10.1016/j.microrel.2007.11.002_bib27) 2001; 78 Atanassova (10.1016/j.microrel.2007.11.002_bib18) 1998; 135 DiMaria (10.1016/j.microrel.2007.11.002_bib19) 1995; 78 Atanassova (10.1016/j.microrel.2007.11.002_bib11) 2002; 33 Atanassova (10.1016/j.microrel.2007.11.002_bib3) 2001; vol. 4 Wang (10.1016/j.microrel.2007.11.002_bib17) 2007; 28 Ieong (10.1016/j.microrel.2007.11.002_bib6) 2006; 9 (10.1016/j.microrel.2007.11.002_bib5) 2004 10.1016/j.microrel.2007.11.002_bib13 |
| References_xml | – volume: 28 start-page: 258 year: 2007 ident: 10.1016/j.microrel.2007.11.002_bib17 article-title: Wide Vfb and Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics publication-title: IEEE Electron Dev Lett doi: 10.1109/LED.2007.891757 contributor: fullname: Wang – volume: vol. 220 start-page: 41 year: 2006 ident: 10.1016/j.microrel.2007.11.002_bib21 article-title: On the characterization of electronically active defects in high-k gate dielectrics contributor: fullname: Buchanan – volume: 50 start-page: 387 year: 2006 ident: 10.1016/j.microrel.2007.11.002_bib16 article-title: Advanced high-k dielectric stacks with poly Si and metal gates: recent progress and current challenges publication-title: IBM J Res Dev doi: 10.1147/rd.504.0387 contributor: fullname: Gusev – volume: 47 start-page: 913 year: 2007 ident: 10.1016/j.microrel.2007.11.002_bib9 article-title: Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs publication-title: Microelectron Reliab doi: 10.1016/j.microrel.2006.06.006 contributor: fullname: Atanassova – volume: 30 start-page: 265 year: 1999 ident: 10.1016/j.microrel.2007.11.002_bib10 article-title: Hydrogen annealing effects on the properties of thermal Ta2O5 on Si publication-title: Microelectron J doi: 10.1016/S0026-2692(98)00157-8 contributor: fullname: Atanassova – volume: 426 start-page: 191 year: 2003 ident: 10.1016/j.microrel.2007.11.002_bib12 article-title: High temperature-induced crystallization in Ta2O5 layers and its influence on the electrical properties publication-title: Thin Solid Films doi: 10.1016/S0040-6090(03)00027-0 contributor: fullname: Atanassova – volume: vol. 4 start-page: 439 year: 2001 ident: 10.1016/j.microrel.2007.11.002_bib3 article-title: Thin Ta2O5 layers on Si as an alternative to SiO2 for high density DRAM applications contributor: fullname: Atanassova – volume: 5 start-page: 45 year: 2005 ident: 10.1016/j.microrel.2007.11.002_bib8 article-title: Threshold voltage instabilities in high-κ gate dielectric stacks publication-title: IEEE Trans Dev Mater Reliab doi: 10.1109/TDMR.2005.845880 contributor: fullname: Zafar – volume: 27 start-page: 206 year: 2002 ident: 10.1016/j.microrel.2007.11.002_bib4 article-title: Materials characterization of alternative gate dielectrics publication-title: MRS Bull doi: 10.1557/mrs2002.72 contributor: fullname: Busch – volume: 82 start-page: 55 year: 2006 ident: 10.1016/j.microrel.2007.11.002_bib15 article-title: Electrical characteristics of Ta2O5 based capacitors with different gate electrodes publication-title: Appl Phys A doi: 10.1007/s00339-005-3300-7 contributor: fullname: Spassov – volume: 9 start-page: 26 year: 2006 ident: 10.1016/j.microrel.2007.11.002_bib6 article-title: Transistor scaling with novel materials publication-title: Mater Today doi: 10.1016/S1369-7021(06)71540-1 contributor: fullname: Ieong – ident: 10.1016/j.microrel.2007.11.002_bib1 – volume: 5 start-page: 5 year: 2005 ident: 10.1016/j.microrel.2007.11.002_bib7 article-title: Review on high-k dielectrics reliability issues publication-title: IEEE Trans Dev Mater Reliab doi: 10.1109/TDMR.2005.845236 contributor: fullname: Ribes – ident: 10.1016/j.microrel.2007.11.002_bib13 – volume: 83 start-page: 372 year: 1999 ident: 10.1016/j.microrel.2007.11.002_bib26 article-title: Hydrogen electrochemistry and stress-induced leakage current in silica publication-title: Phys Rev Lett doi: 10.1103/PhysRevLett.83.372 contributor: fullname: Bloechl – volume: 64 start-page: 734 year: 1988 ident: 10.1016/j.microrel.2007.11.002_bib23 article-title: Modeling of charge-injection effects in metal–oxide–semiconductor structures publication-title: J Appl Phys doi: 10.1063/1.341942 contributor: fullname: Avni – volume: 83 start-page: 1918 year: 2006 ident: 10.1016/j.microrel.2007.11.002_bib14 article-title: Influence of the metal electrode on the characteristics of thermal Ta2O5 capacitors publication-title: Microelectron Eng doi: 10.1016/j.mee.2006.01.043 contributor: fullname: Atanassova – volume: 135 start-page: 71 year: 1998 ident: 10.1016/j.microrel.2007.11.002_bib18 article-title: X-ray photoelectron spectroscopy of thermal thin Ta2O5 films on Si publication-title: Appl Surf Sci doi: 10.1016/S0169-4332(98)00278-5 contributor: fullname: Atanassova – volume: 47 start-page: 4073 year: 1976 ident: 10.1016/j.microrel.2007.11.002_bib20 article-title: Determination of insulator bulk trapped charge densities and centroids from photocurrent–voltage characteristics of MOS structures publication-title: J Appl Phys doi: 10.1063/1.323212 contributor: fullname: DiMaria – volume: 78 start-page: 3289 year: 2001 ident: 10.1016/j.microrel.2007.11.002_bib27 article-title: Stress-induced leakage current in ultrathin SiO2 layers and the hydrogen dispersive transport model publication-title: Appl Phys Lett doi: 10.1063/1.1375003 contributor: fullname: Houssa – year: 2004 ident: 10.1016/j.microrel.2007.11.002_bib5 – volume: 60 start-page: 2024 year: 1986 ident: 10.1016/j.microrel.2007.11.002_bib22 article-title: Trap generation and occupation dynamics in SiO2 under charge injection stress publication-title: J Appl Phys doi: 10.1063/1.337204 contributor: fullname: Nissan-Cohen – volume: 89 start-page: 5243 year: 2001 ident: 10.1016/j.microrel.2007.11.002_bib2 article-title: High-κ gate dielectrics: current status and materials properties considerations publication-title: J Appl Phys doi: 10.1063/1.1361065 contributor: fullname: Wilk – volume: 78 start-page: 3883 year: 1995 ident: 10.1016/j.microrel.2007.11.002_bib19 article-title: Mechanism for stress-induced leakage currents in thin silicon dioxide films publication-title: J Appl Phys doi: 10.1063/1.359905 contributor: fullname: DiMaria – volume: 33 start-page: 907 year: 2002 ident: 10.1016/j.microrel.2007.11.002_bib11 article-title: Influence of oxidation temperatures on the microstructure and electrical properties of Ta2O5 on Si publication-title: Microelectron J doi: 10.1016/S0026-2692(02)00120-9 contributor: fullname: Atanassova – volume: 97 start-page: 094104 year: 2005 ident: 10.1016/j.microrel.2007.11.002_bib25 article-title: Conduction and reliability behavior of thermal Ta2O5-Si structures and the effect of the gate electrode publication-title: J Appl Phys doi: 10.1063/1.1884758 contributor: fullname: Atanassova – volume: 5 start-page: 20 year: 2005 ident: 10.1016/j.microrel.2007.11.002_bib24 article-title: Validity of constant voltage stress based reliability assessment of high-k devices publication-title: IEEE Trans Dev Mater Reliab doi: 10.1109/TDMR.2005.845807 contributor: fullname: Lee |
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| Title | Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks |
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