Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks

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Bibliographic Details
Published inMicroelectronics and reliability Vol. 48; no. 4; pp. 514 - 525
Main Authors ATANASSOVA, E, PASKALEVA, A, NOVKOVSKI, N
Format Journal Article
LanguageEnglish
Published Oxford Elsevier 01.04.2008
Subjects
Applied sciences
Dielectric, amorphous and glass solid devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Electron traps
Charge carrier trapping
Electric stress
Wear
Stress effects
Leakage current
High k dielectric
Oxidation
Reliability
Capacitor
Electrical characteristic
Damaging
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ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2007.11.002