Pulsed laser irradiation of silicon multilayers: A numerical model

• Published in: Physics letters. A Vol. 138; no. 9; pp. 502 - 506
• Main Authors: Aydinli, A., Gündüç, Y., Topaçli, C.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 17.07.1989; Elsevier Science
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Multiple layer; Irradiation; Laser beam
• ISSN: 0375-9601; 1873-2429
• DOI: 10.1016/0375-9601(89)90754-8

The one-dimensional heat flow equation has been solved using the finite differences method for pulsed laser irradiation of silicon multilayers. The response of both a-Si/c-Si/a-Si/c-Si and c-Si/a-Si/c-Si sequences have been studied using various pulse durations and energy densities. Both surface and buried primary melts and explosively crystallizing secondary melt are observed. In contrast with single a-Si layers on c-Si, we find that increasing pulse durations suppresses explosive crystallization in multilayers. It is also shown that by tailoring laser parameters it is possible to modulate the multilayers structurally.