Experimental study of saddle point conductance in strongly disordered Si-metal nitride oxide semiconductor structure at high magnetic fields

We have experimentally shown that percolating 2D electron systems based on Si-metal-nitride-oxide semiconductor structures with strong fluctuation potential reveal conductance quantization signatures up to room temperature, despite the sample sizes being in the micrometer range. The gate length of t...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 298; no. 1-4; pp. 491 - 495
Main Authors Davydov, A., Chumakov, N., Aronzon, B., Vedeneev, A., Bakaushin, D., Galibert, J., Leotin, J.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.04.2001
Elsevier
Subjects
Conductance quantization
Disordered semiconductors
Magnetoresistance
Magnetoresistance
Conductance quantization
Disordered semiconductors
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Summary:We have experimentally shown that percolating 2D electron systems based on Si-metal-nitride-oxide semiconductor structures with strong fluctuation potential reveal conductance quantization signatures up to room temperature, despite the sample sizes being in the micrometer range. The gate length of the structure was chosen to be comparable with the percolation correlation length, while its width is much bigger. Under high magnetic field action the structure shows positive magnetoresistance at gate voltages where the conductance G is lower than e2/h and negative at higher values. We have interpreted these effects in terms of a self-organized disordered structure in which the resistance is controlled by the conductance of a single fluctuation potential saddle point constriction having quantized values.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(01)00369-6