Effect of stacking order on device performance of bilayer black phosphorene-field-effect transistor

• Published in: Journal of applied physics Vol. 118; no. 22
• Main Authors: Mukhopadhyay, A., Banerjee, L., Sengupta, A., Rahaman, H.
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 14.12.2015
• Subjects: Applied physics; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRONS; Field effect transistors; HOLES; Immunity; LAYERS; MOSFET; MOSFETs; N-TYPE CONDUCTORS; ORIENTATION; P-TYPE CONDUCTORS; Phosphorene; PHOSPHORUS; Semiconductor devices; Stacking; STACKING FAULTS; Transconductance
• DOI: 10.1063/1.4937148
• ISSN: 0021-8979

We investigate the effect of stacking order of bilayer black phosphorene on the device properties of p-MOSFET and n-MOSFET. Two layers of black phosphorus are stacked in three different orders and are used as channel material in both n-MOSFET and p-MOSFET devices. The effects of different stacking orders on electron and hole effective masses and output characteristics of MOSFETs, such as ON currents, ON/OFF ratio, and transconductance are analyzed. Our results show that about 1.37 times and 1.49 times increase in ON current is possible along armchair and zigzag directions, respectively, 55.11% variation in transconductance is possible along armchair direction, by changing stacking orders (AA, AB, and AC) and about 8 times increase in ON current is achievable by changing channel orientation (armchair or zigzag) in p-MOSFET. About 14.8 mV/V drain induced barrier lowering is observed for both p-MOSFET and n-MOSFET, which signifies good immunity to short channel effects.