Effect of stacking order on device performance of bilayer black phosphorene-field-effect transistor

We investigate the effect of stacking order of bilayer black phosphorene on the device properties of p-MOSFET and n-MOSFET. Two layers of black phosphorus are stacked in three different orders and are used as channel material in both n-MOSFET and p-MOSFET devices. The effects of different stacking o...

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Bibliographic Details
Published inJournal of applied physics Vol. 118; no. 22
Main Authors Mukhopadhyay, A., Banerjee, L., Sengupta, A., Rahaman, H.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 14.12.2015
Subjects
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
ELECTRONS
Field effect transistors
HOLES
Immunity
LAYERS
MOSFET
MOSFETs
N-TYPE CONDUCTORS
ORIENTATION
P-TYPE CONDUCTORS
Phosphorene
PHOSPHORUS
Semiconductor devices
Stacking
STACKING FAULTS
Transconductance
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Summary:We investigate the effect of stacking order of bilayer black phosphorene on the device properties of p-MOSFET and n-MOSFET. Two layers of black phosphorus are stacked in three different orders and are used as channel material in both n-MOSFET and p-MOSFET devices. The effects of different stacking orders on electron and hole effective masses and output characteristics of MOSFETs, such as ON currents, ON/OFF ratio, and transconductance are analyzed. Our results show that about 1.37 times and 1.49 times increase in ON current is possible along armchair and zigzag directions, respectively, 55.11% variation in transconductance is possible along armchair direction, by changing stacking orders (AA, AB, and AC) and about 8 times increase in ON current is achievable by changing channel orientation (armchair or zigzag) in p-MOSFET. About 14.8 mV/V drain induced barrier lowering is observed for both p-MOSFET and n-MOSFET, which signifies good immunity to short channel effects.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4937148