Effects of rotating magnetic field on Bi12SiO20 crystal growth by vertical zone-melting technique

Saved in:
Bibliographic Details
Published inJournal of crystal growth Vol. 312; no. 9; pp. 1622 - 1626
Main Authors LIU, Y, AI, F, PAN, X. H, ZHANG, Y, ZHOU, Y. F, FENG, C. D
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 15.04.2010
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Growth from melts; zone melting and refining
Materials science
Methods of crystal growth; physics of crystal growth
Physics
Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
Crystal growth
Forced convection
B2. Oxide crystal
Bismuth oxide
Growth interface
A2. Rotating magnetic field
Monocrystals
Rotating field
Zone melting
Silicon oxides
Growth mechanism
A2. Crystal growth
A2. Vertical zone-melting
Thermal conductivity
Growth striation
Heat transfer
Crystal growth from melts
Online AccessGet full text

Cover

More Information
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2010.01.025