Controlling size distribution in silicon brush-like superstructures grown by self-organisation

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 88; no. 2; pp. 298 - 301
• Main Authors: Klimovskaya, A.I, Ostrovskii, I.P, Efremov, A.A, Sarikov, A.V, Kostyukevich, S.V
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 16.01.2002; Elsevier
• Subjects: Controlled growth; Cross-disciplinary physics: materials science; rheology; Distribution function; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Self-organisation; Silicon; Theory and models of film growth; Wire-like crystals; Distribution function; Self-organisation; Silicon; Controlled growth; Wire-like crystals; Crystal growth; Wires; Digital simulation; Superstructure; Growth mechanism; Formates; Crystal growth from vapors; Nanostructures; Nanostructured materials; Distribution functions
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/S0921-5107(01)00890-X

The analysis of distribution on radii of wire-like crystals grown by self-organisation process is presented. The time evolution of radii as well as their distribution functions are described using different models of crystal growth and the Fokker–Plank equation. A rather good agreement between the results of calculations and experimental distributions of silicon wires prepared by stimulated growth by vapour-transport reactions is achieved. The results suggest that the self-organisation processes can be used for the formation of structures with desired distribution of nanowires on radii.