Enhancing optical gains in Si nanocrystals via hydrogenation and cerium ion doping

We report optical gain enhancements in Si nanocrystals (Si-NCs) via hydrogenation and Ce3+ ion doping. Variable stripe length technique was used to obtain gains. At 0.3 W/cm2 pumping power density of pulsed laser, net gains were observed together with gain enhancements after hydrogenation and/or Ce3...

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Bibliographic Details
Published inJournal of applied physics Vol. 116; no. 4
Main Authors Wang, Dong-Chen, Chen, Jia-Rong, Li, Yan-Li, Song, Sheng-Chi, Guo, Wen-Ping, Lu, Ming
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 28.07.2014
Subjects
Applied physics
Cerium
CERIUM ADDITIONS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CORRECTIONS
DE-EXCITATION
Doping
EXCITATION
HYDROGENATION
LASER RADIATION
LIFETIME
LOSSES
Nanocrystals
NANOMATERIALS
NANOSTRUCTURES
OPTICAL PROPERTIES
Optical pumping
PHOTOLUMINESCENCE
POWER DENSITY
Pulsed lasers
SILICON
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Summary:We report optical gain enhancements in Si nanocrystals (Si-NCs) via hydrogenation and Ce3+ ion doping. Variable stripe length technique was used to obtain gains. At 0.3 W/cm2 pumping power density of pulsed laser, net gains were observed together with gain enhancements after hydrogenation and/or Ce3+ ion doping; gains after loss corrections were between 89.52 and 341.95 cm−1; and the photoluminescence (PL) lifetime was found to decrease with the increasing gain enhancement. At 0.04 W/cm2 power density, however, no net gain was found and the PL lifetime increased with the increasing PL enhancement. The results were discussed according to stimulated and spontaneous excitation and de-excitation mechanisms of Si-NCs.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
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ISSN:0021-8979
1089-7550
DOI:10.1063/1.4891506