Evaluations of strains in fused layers using patterned substrates

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 77; no. 1; pp. 83 - 87
• Main Authors: Hwang, Sung Min, Lee, Ju Young, Park, Se-Ki, Hyon, Chan Kyeong, Kim, Yong, Park, Young Ju, Kim, Eun Kyu, Choi, In-Hoon
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 07.08.2000; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Epitaxy; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Micro-PL; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Wafer fusion; Epitaxy; Micro-PL; Wafer fusion; Aluminium arsenides; Stress analysis; Patterning; Gallium arsenides; Inorganic compounds; Melting; Ternary compounds; Quantum wells; Photoluminescence; Binary compounds; Experimental study; Substrates; Thermal expansion; Mismatch lattice; Groove; SEM; Thermal stresses
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/S0921-5107(00)00468-2

Strains existed in wafer fused AlGaAs/GaAs quantum wells on patterned InP substrate was systematically evaluated. The fused layers on the U-grooved substrate were characterized by scanning electron microscopy and micro-photoluminescence. Through the micro-probing technique, we observed no misfit-strain in the wafer fused interface layer but a little bit of thermal strain resulted from different thermal expansion coefficients in between GaAs and InP matrices. We successfully proved that the concept of strains existed in wafer fused layers by employing the patterned substrates.