An efficient in-plane energy level shift in InAs/InGaAsP/InP quantum dots by selective area growth

Selective area growth was adopted to grow high-quality quantum dots (QDs) of different energy levels on the same plane at 1.5   μ m . At room temperature, the photoluminescence (PL) peak of InAs/InGaAsP QDs on InP substrate was shifted from 1445 to 1570 nm for sample 1 (from 1385 to 1485 nm for samp...

Full description

Saved in:
Bibliographic Details
Published inJournal of applied physics Vol. 107; no. 4; pp. 043522 - 043522-4
Main Authors Nguyen, D. H., Park, J., Jang, Y. D., Lee, D., Pyun, S. H., Jeong, W. G., Jang, J. W.
Format Journal Article
LanguageEnglish
Published American Institute of Physics 15.02.2010
Online AccessGet full text

Cover

More Information
Summary:Selective area growth was adopted to grow high-quality quantum dots (QDs) of different energy levels on the same plane at 1.5   μ m . At room temperature, the photoluminescence (PL) peak of InAs/InGaAsP QDs on InP substrate was shifted from 1445 to 1570 nm for sample 1 (from 1385 to 1485 nm for sample 2) in a plane, with a PL intensity comparable to those of regular samples grown without dielectric patterns. The dot shape was a round dome, with the density reduced by 28% and the height increased by 17%. Time-resolved PL indicated that the selectively grown QDs behaved similarly to regular QDs. These results open up a practical method for in-plane integration of QD devices.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3309766