Photodetection around 10   μ m wavelength using s - p transitions in InAs/AlAs/AlGaAs self-assembled quantum dots

• Published in: Journal of applied physics Vol. 107; no. 5; pp. 054504 - 054504-5
• Main Authors: Nagashima, Mitsuhiro, Kibe, Michiya, Doshida, Minoru, Uchiyama, Yasuhito, Matsukura, Yusuke, Nishino, Hironori
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 01.03.2010
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.3327002

We propose a quantum dot infrared photodetector (QDIP) having distinct sensitivity to mutually orthogonal in-plane polarized infrared radiation, and applicable to practical infrared (IR) imaging applications. Our QDIP has either an InAs/AlAs/AlGaAs or an AlAs/InAs/AlAs/AlGaAs structure in which extra-thin AlAs layers were introduced underneath the AlGaAs buffer layer to strongly confine the carriers and also to enhance the dot density before the Stranski-Krastanov mode growth of InAs quantum dots was carried out. At 80 K, the detector has high sensitivity to in-plane orthogonally polarized infrared light, and photocurrent responsivity peaks of up to 230 mA/W associated with distinct mutually orthogonal polar lights which were observed at a wavelength of around 10.0   μ m .