Photon assisted hypersonic phonon emission from terahertz-driven two-dimensional electron gases

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 51; no. 1; pp. 81 - 84
• Main Authors: Xu, W, Zhang, C
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 27.02.1998; Elsevier
• Subjects: 2DEG; Acoustic phonon; Acoustics; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Fundamental areas of phenomenology (including applications); GaAs; Hypersound; Lattice dynamics; Phonon-electron and phonon-phonon interactions; Phonon-quasiparticle interactions; Phonons and vibrations in crystal lattices; Physics; THz radiation; Transduction; acoustical devices for the generation and reproduction of sound; Hypersound; 2DEG; THz radiation; Acoustic phonon; GaAs; GHz range; Semiconductor device; Gallium arsenides; THz range; Phonon; Two dimensional model; Wave generation; Optoacoustic effect; Modeling; Ultrasonic transducer; Electron gas
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/S0921-5107(97)00233-X

A theoretical study of the generation of high-frequency acoustic phonons by electrons in GaAs-based two-dimensional (2D) electron gases (2DEGs), subject to intense terahertz (THz) electromagnetic (EM) radiations, is presented. We have studied the frequency and angular dependence of the phonon emission generated optically. The distinctive nature for electron–photon–phonon interactions in a 2DEG results in a strong dependence of the acoustic phonon emission on strength and frequency of the THz EM field. Consequently, frequency- and angle-tunable hypersonic phonon emission can be generated by varying the strength and/or frequency of the radiation field. These results are pertinent to phonon emission experiments and to the application of 2D semiconductor systems as high-frequency hypersonic sources.