A CPW Probe to Rectangular Waveguide Transition for On-Wafer Micromachined Waveguide Characterization

• Published in: IEEE transactions on terahertz science and technology Vol. 14; no. 1; pp. 98 - 108
• Main Authors: Beuerle, Bernhard, Campion, James, Glubokov, Oleksandr, Shah, Umer, Oberhammer, Joachim
• Format: Journal Article
• Language: English
• Published: Piscataway IEEE 01.01.2024; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Aspect ratio; Calibration; Coplanar waveguide (CPW) probe; Coplanar waveguides; Equivalent circuits; Frequencies; Insertion loss; Integrated circuit modeling; Micromachining; Probes; Reactive ion etching; Rectangular waveguides; silicon micromachining; submillimeter wave; terahertz; transition; waveguide; Waveguide components; waveguide probe; Waveguide transitions
• ISSN: 2156-342X; 2156-3446; 2156-3446
• DOI: 10.1109/TTHZ.2023.3332304

A new transition from coplanar waveguide probe to micromachined rectangular waveguide for on-wafer device characterization is presented in this article. The transition is fabricated in the same double H-plane split silicon micromachined waveguide technology as the devices under test (DUT), requiring no additional postprocessing or assembly steps. We outline the design and fabrication process of the transition for the frequency band of 220-230 GHz. A coplanar waveguide structure acts as the probing interface, with an E-field probe protruding in the waveguide cavity exciting the fundamental waveguide mode. Guard structures around the E-field probe increase the aspect ratio during deep reactive ion etching and secure its geometry. A full equivalent circuit model is provided by analyzing its working principle. RF characterization of fabricated devices is performed for both single-ended and back-to-back configurations. Measured <inline-formula><tex-math notation="LaTeX">S</tex-math></inline-formula>-parameters of the single-ended transition are obtained by applying a two-tiered calibration and are analyzed using the equivalent circuit model. The insertion loss of the single-ended transition lies between 0.3 and 1.5 dB over the whole band, with the return loss in excess of 8 dB. In addition to previously reported characterization of a range of DUT the viability of the transition for on-wafer device calibration is demonstrated by characterizing a straight waveguide line, achieving an insertion loss per unit length of 0.02-0.08 dB/mm in the frequency band of 220-230 GHz.