Life tests on CdSe thin film transistors

CdSe thin film transistors have been subjected to “shelf” life tests atelevated temperatures. It was found that the characteristics showed an initial deterioration followed by a recovery within 200 h, after which they exhibited good stability. A mechanism to account for this behaviour is tentatively...

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Bibliographic Details
Published inThin solid films Vol. 28; no. 2; pp. 283 - 287
Main Authors Firth, M.J., Anderson, J.C.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.01.1975
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Summary:CdSe thin film transistors have been subjected to “shelf” life tests atelevated temperatures. It was found that the characteristics showed an initial deterioration followed by a recovery within 200 h, after which they exhibited good stability. A mechanism to account for this behaviour is tentatively proposed.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(75)90119-4