Life tests on CdSe thin film transistors
CdSe thin film transistors have been subjected to “shelf” life tests atelevated temperatures. It was found that the characteristics showed an initial deterioration followed by a recovery within 200 h, after which they exhibited good stability. A mechanism to account for this behaviour is tentatively...
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Published in | Thin solid films Vol. 28; no. 2; pp. 283 - 287 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.01.1975
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Online Access | Get full text |
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Summary: | CdSe thin film transistors have been subjected to “shelf” life tests atelevated temperatures. It was found that the characteristics showed an initial deterioration followed by a recovery within 200 h, after which they exhibited good stability. A mechanism to account for this behaviour is tentatively proposed. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/0040-6090(75)90119-4 |