Degradation of SiGe devices by proton irradiation

The degradation and recovery behavior of strained Si 1− x Ge x diodes and heterojunction bipolar transistors (HBTs) irradiated by protons are studied. The degradation of device performance and the generation of lattice defects are reported as a function of fluence and also compared extensively with...

Full description

Saved in:
Bibliographic Details
Published inRadiation physics and chemistry (1993) Vol. 50; no. 4; pp. 341 - 346
Main Authors Ohyama, Hidenori, Vanhellemont, Jan, Takami, Yasukiyo, Sunaga, Hiromi, Nashiyama, Isamu, Uwatoko, Yoshiya, Poortmans, Jef, Caymax, Matty
Format Journal Article Conference Proceeding
LanguageEnglish
Published Oxford Elsevier Ltd 01.10.1997
Elsevier
Subjects
Applied sciences
Electronics
Exact sciences and technology
Testing, measurement, noise and reliability
Binary compound
Temperature effect
Crystal lattice
Semiconductor diode
Germanium Silicides
Bipolar transistor
Degradation
Recovery annealing
Integrated circuit
Proton irradiation
Heterojunction transistor
Radiation effect
Reliability
Thermal annealing
Defect formation
Electrical characteristic
Online AccessGet full text

Cover

More Information
Summary:The degradation and recovery behavior of strained Si 1− x Ge x diodes and heterojunction bipolar transistors (HBTs) irradiated by protons are studied. The degradation of device performance and the generation of lattice defects are reported as a function of fluence and also compared extensively with previous results obtained on electron and neutron irradiated devices. The radiation source dependence of the degradation is discussed taking into account the number of knock-on atoms and the nonionizing energy loss (NIEL).
ISSN:0969-806X
1879-0895
DOI:10.1016/S0969-806X(97)00044-3