17.2% Efficient CdSexTe1−x solar cell with (InxGa1−x)2O3 emitter on lightweight and flexible glass

• Published in: Applied physics letters Vol. 124; no. 8
• Main Authors: Jamarkattel, Manoj K., Abbas, Ali, Mathew, Xavier, Neupane, Sabin, Bastola, Ebin, Li, Deng-Bing, Seibert, Samuel, Patel, Aesha P., Song, Zhaoning, Liu, Xiaolei, Walls, John Michael, Garner, Sean M., Phillips, Adam B., Ellingson, Randy J., Yan, Yanfa, Heben, Michael J.
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 19.02.2024; American Institute of Physics (AIP)
• Subjects: Building envelopes; Cadmium tellurides; Emitters; Form factors; Gallium oxides; High temperature; Intermetallic compounds; Lightweight; Photovoltaic cells; Physics; Solar cells; Space applications; Sublimation; Substrates
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/5.0193628

High-efficiency, lightweight, and flexible solar cells are sought for a variety of applications particularly when high power density and flexible form factors are desired. Development of solar cells on flexible substrates may also offer production advantages in roll-to-roll or sheet-to-sheet processes. Here, we report device efficiencies of 17.2% and 14.6%, under AM1.5G and AM0 irradiances, respectively, for a flexible, lightweight, CdTe-based solar cell. To advance the efficiency relative to the highest previously reported AM1.5G value of 16.4%, we used an indium gallium oxide (IGO) emitter layer on a cadmium stannate (CTO) transparent conductor, which was deposited on 100-μm thick Corning® Willow® Glass. A sputtered CdSe layer was employed to incorporate Se into a CdTe absorber that was deposited by close-space sublimation, and CuSCN was used as a hole transport layer between the CdTe and the back metal electrode. The IGO and CTO layers remained intact during the high temperature film processing as seen in cross-sectional imaging and elemental mapping. This device configuration offers great promise for building-integrated photovoltaics, space applications, and higher rate manufacturing.