Cadmium selenide film through ammonia free thermal substitution reaction on cadmium oxide hydroxide films by chemical vapor deposition

Polycrystalline CdSe films with hexagonal phase were deposited on glass substrates by thermal substitution reaction in a CVD reactor. The films were prepared in two stages. First, films of cadmium oxide hydroxide Cd(O2)0.88(OH)0.24 were deposited on the glass substrates by chemical bath deposition (...

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Bibliographic Details
Published inMaterials letters Vol. 116; pp. 254 - 257
Main Authors Chávez-Urbiola, I.R., Chávez-Urbiola, E.A., Ochoa-Landín, R., Castillo, S.J., Vorobiev, Y.V., Ramírez-Bon, R.
Format Journal Article
LanguageEnglish
Published 01.02.2014
Subjects
Cadmium
Cadmium selenides
Chemical vapor deposition
Intermetallics
Selenium
Semiconductors
Substitution reactions
Substrates
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Summary:Polycrystalline CdSe films with hexagonal phase were deposited on glass substrates by thermal substitution reaction in a CVD reactor. The films were prepared in two stages. First, films of cadmium oxide hydroxide Cd(O2)0.88(OH)0.24 were deposited on the glass substrates by chemical bath deposition (CBD), using ammonia free, low temperature process in alkaline aqueous solution. Then the CBD-deposited films were placed in a Chemical Vapor Deposition (CVD) Hot Wall reactor where they acted as precursors in a reaction of substitution of non-metallic film component by Se, thus forming CdSe semiconductor films. The Se gas was transported from the source to the substrate with a nitrogen flux of 0.25l/min. The chalcogen source temperature was 500 degree C, which is above the melting point (217 degree C) but below the boiling point of Se (684.9 degree C). The substrate temperature was adjusted to obtain a hexagonal phase of CdSe.
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ISSN:0167-577X
DOI:10.1016/j.matlet.2013.11.023