Local modes of hydrogen defects in Si:Ge and Ge:Si
We give an overview of the results obtained from joint experimental and theoretical studies of H in Si-rich (Si:Ge) and Ge-rich (Ge:Si) SiGe. Si:Ge and Ge:Si implanted at low temperatures with H + and/or D + have been studied by in situ infrared absorption spectroscopy. The states of isolated H and...
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Published in | Physica. B, Condensed matter Vol. 376; pp. 22 - 27 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.04.2006
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Subjects | |
Online Access | Get full text |
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