Local modes of hydrogen defects in Si:Ge and Ge:Si

• Published in: Physica. B, Condensed matter Vol. 376; pp. 22 - 27
• Main Authors: Pereira, R.N., Bech Nielsen, B., Coutinho, J.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.04.2006
• Subjects: Ab initio theory; FTIR; Hydrogen; SiGe; SiGe; Hydrogen; FTIR; Ab initio theory

We give an overview of the results obtained from joint experimental and theoretical studies of H in Si-rich (Si:Ge) and Ge-rich (Ge:Si) SiGe. Si:Ge and Ge:Si implanted at low temperatures with H + and/or D + have been studied by in situ infrared absorption spectroscopy. The states of isolated H and...