Local modes of hydrogen defects in Si:Ge and Ge:Si

We give an overview of the results obtained from joint experimental and theoretical studies of H in Si-rich (Si:Ge) and Ge-rich (Ge:Si) SiGe. Si:Ge and Ge:Si implanted at low temperatures with H + and/or D + have been studied by in situ infrared absorption spectroscopy. The states of isolated H and...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 376; pp. 22 - 27
Main Authors Pereira, R.N., Bech Nielsen, B., Coutinho, J.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.04.2006
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Summary:We give an overview of the results obtained from joint experimental and theoretical studies of H in Si-rich (Si:Ge) and Ge-rich (Ge:Si) SiGe. Si:Ge and Ge:Si implanted at low temperatures with H + and/or D + have been studied by in situ infrared absorption spectroscopy. The states of isolated H and H dimers in dilute SiGe have also been investigated by ab initio theory. Four configurations of positively charged bond-centered H ( H BC + ) have been identified both in Si:Ge and in Ge:Si. Interestingly, the infrared spectrum arising from H BC + centers in Ge:Si is a mirror image of that observed for Si:Ge, which is a direct result of the opposite sign of the strain field induced by Si–Ge bonds on the lattice of Si:Ge and Ge:Si materials. We found that, unlike Ge in Si:Ge, the Si atoms in Ge:Si are efficient trapping sites for H, resulting in the appearance of H anti-bonded to Si at low temperatures and H dimers in the form of Ge – H BC ⋯ Si – H AB defects at room temperature.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2005.12.008